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Publications of Author

1. A. Bravaix, D. Goguenheim, N. Revil, E. Vincent
   Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:9-10, pp:1313-1318 [Journal]
   
2. A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent
   Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2003, v:43, n:8, pp:1241-1246 [Journal]
   
3. A. Bravaix, D. Goguenheim, N. Revil, E. Vincent
   Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2004, v:44, n:1, pp:65-77 [Journal]
   
4. D. Goguenheim, A. Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, P. Boivin
   Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:3-4, pp:487-492 [Journal]
   
5. Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix
   Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:9-11, pp:1349-1354 [Journal]
   
6. V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent
   A thorough investigation of MOSFETs NBTI degradation. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:1, pp:83-98 [Journal]
   
7. A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent
   Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:9-11, pp:1370-1375 [Journal]
   
8. C. Trapes, D. Goguenheim, A. Bravaix
   Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:5-6, pp:883-886 [Journal]
   
9. C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix
   Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal]
   
10. C. R. Parthasarathy, A. Bravaix, C. Guérin, M. Denais, V. Huard
    Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. [Citation Graph (0, 0)][DBLP]
    PATMOS, 2007, pp:191-200 [Conf]