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Publications of Author

1. S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo
   Body effect induced wear-out acceleration in ultra-thin oxides. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:7, pp:1031-1034 [Journal]
   
2. F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
   Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal]
   
3. F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo
   Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:7, pp:1035-1039 [Journal]
   
4. S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo
   Failures in ultrathin oxides: Stored energy or carrier energy driven? [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:9-10, pp:1367-1372 [Journal]
   
5. A. Bravaix, D. Goguenheim, N. Revil, E. Vincent
   Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:9-10, pp:1313-1318 [Journal]
   
6. F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
   Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal]
   
7. D. Roy, S. Bruyère, E. Vincent, F. Monsieur
   Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2002, v:42, n:9-11, pp:1497-1500 [Journal]
   
8. F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, T. Skotnicki, G. Pananakakis, G. Ghibaudo
   On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal]
   
9. A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent
   Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2003, v:43, n:8, pp:1241-1246 [Journal]
   
10. C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent
    MIM capacitance variation under electrical stress. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:8, pp:1237-1240 [Journal]
    
11. G. Ghibaudo, E. Vincent
    Guest Editorial. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:8, pp:1173- [Journal]
    
12. A. Bravaix, D. Goguenheim, N. Revil, E. Vincent
    Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2004, v:44, n:1, pp:65-77 [Journal]
    
13. V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent
    A thorough investigation of MOSFETs NBTI degradation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:83-98 [Journal]
    
14. A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent
    Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:9-11, pp:1370-1375 [Journal]
    
15. C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix
    Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal]